TY - JOUR ID - 147012 TI - Influence of missmatch-induced stress and porosity of materials on technological process JO - International Journal of Research in Industrial Engineering JA - RIEJ LA - en SN - 2783-1337 AU - Pankratov, Evgeny L. AD - Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod, 603950, Russia. Y1 - 2022 PY - 2022 VL - 11 IS - 2 SP - 92 EP - 118 KW - C-multiplier KW - Optimization of manufacturing KW - Accounting of missmatch induced stress and porosity of materials KW - analytical approach for modelling DO - 10.22105/riej.2022.323547.1279 N2 - In this paper we introduce an approach to increase density of field-effect transistors framework a C-multiplier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress. UR - https://www.riejournal.com/article_147012.html L1 - https://www.riejournal.com/article_147012_111af1bd07533362da61b854694a40e1.pdf ER -