Document Type : Research Paper
Author
Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod, 603950, Russia.
Abstract
In this paper we introduce an approach to increase density of field-effect transistors framework a C-multiplier. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
Keywords
- C-multiplier
- Optimization of manufacturing
- Accounting of missmatch induced stress and porosity of materials
- Analytical approach for modelling
Main Subjects
- Wang, Z., Duan, Q., & Roh, J. (2014). A 0.03 mm2 delta-sigma modulator with cascaded-inverter amplifier. Analog integrated circuits and signal processing, 81(2), 495-501.
- Ghaderi, N., Ghol, Z. D., & Fatemi, S. R. (2016). A CMOS 7Gb/s, 4-PAM and 4-PWM, serial link transceiver. Analog integrated circuits and signal processing, 89(3), 809-823.
- Pushkar, K. L. (2018). Electronically controllable quadrature sinusoidal oscillator using VD-DIBAs. Circuits and systems, 9(3), 41-48.
- Amhaz, H., Abdallah, L., Harb, A., Chehadi, A., Al Karim, Y. A., Shawish, A., & Noun, Z. (2018). A stand-alone low-power digital temperature sensor for IC monitoring. International journal of electronic design and test, 1(1), 45-53.
- Ageev, O. A., Belyaev, A. E., Boltovets, N. S., Ivanov, V. N., Konakova, R. V., Kudryk, Y., ... & Sachenko, A. V. (2009). Au-TiB x-n-6H-SiC Schottky barrier diodes: specific features of charge transport in rectifying and nonrectifying contact. Semiconductors, 43(7), 865-871.
- Tsai, J. H., Chiu, S. Y., Lour, W. S., & Guo, D. F. (2009). High-performance InGaP/GaAs PnP δ-doped heterojunction bipolar transistor. Semiconductors, 43(7), 939-942.
- Chachuli, S. A. M., Fasyar, P. N. A., Soin, N., Karim, N. M., & Yusop, N. (2014). Pareto ANOVA analysis for CMOS 0.18 µm two-stage Op-amp. Materials science in semiconductor processing, 24, 9-14.
- Ermolovich, I. B., Milenin, V. V., Red’ko, R. A., & Red’ko, S. M. (2009). Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing. Semiconductors, 43(8), 980-984.
- Sinsermsuksakul, P., Hartman, K., Bok Kim, S., Heo, J., Sun, L., Hejin Park, H., ... & Gordon, R. G. (2013). Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer. Applied physics letters, 102(5), 053901. https://doi.org/10.1063/1.4789855
- Reynolds, J. G., Reynolds Jr, C. L., Mohanta, A., Muth, J. F., Rowe, J. E., Everitt, H. O., & Aspnes, D. E. (2013). Shallow acceptor complexes in p-type ZnO. Applied physics letters, 102(15), 152114. https://doi.org/10.1063/1.4802753
- Volokobinskaya, N. I., Komarov, I. N., Matioukhina, T. V., Rechetniko, V. I., Rush, A. A., Falina, I. V., & Yastrebov, A. S. (2001). Investigation of technological processes of manufacturing of the bipolar power high-voltage transistors with a grid of inclusions in the collector region. Semiconductors, 35(8), 1013-1017.
- Pankratov, E. L., & Bulaeva, E. A. (2013). Doping of materials during manufacture p–n-junctions and bipolar transistors; analytical approaches to model technological approaches and ways of optimization of distributions of dopants. Reviews in theoretical science, 1(1), 58-82.
- Kukushkin, S. A., Osipov, A. V., & Romanychev, A. I. (2016). Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates. Physics of the solid state, 58(7), 1448-1452.
- Trukhanov, E. M., Kolesnikov, A. V., & Loshkarev, I. D. (2015). Long-range stresses generated by misfit dislocations in epitaxial films. Russian microelectronics, 44(8), 552-558.
- Pankratov, E. L., & Bulaeva, E. A. (2015). On optimization of regimes of epitaxy from gas phase; some analytical approaches to model physical processes in reactors for epitaxy from gas phase during growth films. Reviews in theoretical science, 3(4), 365-398.
- Ong, K. K., Pey, K. L., Lee, P. S., Wee, A. T. S., Wang, X. C., & Chong, Y. F. (2006). Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing. Applied physics letters, 89(17), 172111. https://doi.org/10.1063/1.2364834
- Wang, H. T., Tan, L. S., & Chor, E. F. (2005). Pulsed laser annealing of Be-implanted GaN. Journal of applied physics, 98(9), 094901.
- Bykov, Y. V., Eremeev, A. G., Zharova, N. A., Plotnikov, I. V., Rybakov, K. I., Drozdov, M. N., ... & Skupov, V. D. (2003). Diffusion processes in semiconductor structures during microwave annealing. Radiophysics and quantum electronics, 46(8), 749-755.
- Al-Absi, M. A., Al-Suhaibani, E. S., & Abuelma’atti, M. T. (2017). A new compact CMOS C-multiplier. Analog integrated circuits and signal processing, 90(3), 653-658.
- Zhang, Y. W., & Bower, A. F. (1999). Numerical simulations of island formation in a coherent strained epitaxial thin film system. Journal of the mechanics and physics of solids, 47(11), 2273-2297.
- Landau, L. D., & Lefshits, E. M. (2001). Theoretical physics. 7. Quantum mechanics- methods and applications.
- Kitayama, M., Narushima, T., Carter, W. C., Cannon, R. M., & Glaeser, A. M. (2000). The Wulff shape of alumina: I, modeling the kinetics of morphological evolution. Journal of the American ceramic society, 83(10), 2561-2531.
- Kudryavtsev, P. G. (2018). Structure of pores in solid porous bodies. PART I. Nanotekhnologii v Stroitel'stve, 10(5), 80-103.
- Brodie, I., & Schwoebel, P. R. (1994). Vacuum microelectronic devices. Proceedings of the IEEE, 82(7), 1006-1034.
- Fahey, P. M., Griffin, P. B., & Plummer, J. D. (1989). Point defects and dopant diffusion in silicon. Reviews of modern physics, 61(2), 289. https://doi.org/10.1103/RevModPhys.61.289
- Vinetskij, V. L. & Kholodar, G. A. (1979). Radiation physics of semiconductors. Naukova Dumka Edition.
- Mynbaeva, M. G., Mokhov, E. N., Lavrent’ev, A. A., & Mynbaev, K. D. (2008). High-temperature diffusion doping of porous silicon carbide. Technical physics letters, 34(9), 731-733.
- Sokolov, Y. D. (1955). About the definition of dynamic forces in the mine lifting. Applied mechanics, 1(1), 23-35.
- Pankratov, E. L. (2007). Dopant diffusion dynamics and optimal diffusion time as influenced by diffusion-coefficient nonuniformity. Russian microelectronics, 36(1), 33-39.
- Pankratov, E. L., & Bulaeva, E. A. (2012). Decreasing of quantity of radiation defects in an implanted-junction rectifiers by using overlayers. International journal of micro-nano scale transport, 3(3), 119-130.
- Pankratov, E. L., & Bulaeva, E. A. (2015). Optimization of manufacturing of emitter-coupled logic to decrease surface of chip. International journal of modern physics B, 29(05), 1550023. https://doi.org/10.1142/S021797921550023X
- Pankratov, E. L. (2017). On approach to optimize manufacturing of bipolar heterotransistors framework circuit of an operational amplifier to increase their integration rate. Influence mismatch-induced stress. Journal of computational and theoretical nanoscience, 14(10), 4885-4899.
- Pankratov, E. L., & Bulaeva, E. A. (2015). An approach to increase the integration rate of planar drift heterobipolar transistors. Materials science in semiconductor processing, 34, 260-268.
- Pankratov, E. L., & Bulaeva, E. A. (2014). An approach to manufacture a heterobipolar transistors in thin film structures. On the method of optimization. International journal of micro-nano scale transport, 4(1), 17-31.
- Pankratov, E. L. (2011). Increasing of the sharpness of p–n junctions by laser pulses. Nano, 6(01), 31-40.
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